ANNEALING OF ION-IMPLANTED GA0.47IN0.53AS

被引：3

|

作者：

SHAHID, MA

ANJUM, M

SEALY, BJ

机构：

来源：

RADIATION EFFECTS LETTERS | 1984年 / 86卷 / 2-3期

关键词：

D O I：

10.1080/01422448408205218

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

收藏

页码：87 / 91

页数：5

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