ANNEALING OF ION-IMPLANTED GA0.47IN0.53AS

被引：3
|
作者：
SHAHID, MA
ANJUM, M
SEALY, BJ
机构：
来源：
RADIATION EFFECTS LETTERS | 1984年 / 86卷 / 2-3期
关键词：
D O I：
10.1080/01422448408205218
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
引用
收藏
页码：87 / 91
页数：5
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