RESONANT TUNNELING AND ESCAPE TIME IN GAAS-ALGAAS HETEROSTRUCTURES

被引：1

作者：

MEZAMONTES, L

RODRIGUEZ, MA

CARRILLO, JL

机构：

[1] Inst. de Fisica, Univ. Autonoma de Puebla

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 3B期

关键词：

D O I：

10.1088/0268-1242/7/3B/116

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have calculated the tunnelling current in GaAl-AlxGa1-xAs heterostructures using non-equilibrium distribution functions. These functions are obtained by means of a set of rate equations for carrier and phonon dynamics which takes account of the fundamental scattering mechanisms in a semiconductor. We analyse the resonant tunnelling as well as the time evolution of the carrier population generated by a laser pulse in a well. In particular, we pay attention to the escape time and its dependence on the external parameters of excitation.

引用

页码：B450 / B452

页数：3

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