ANNEALING OF HOT-CARRIER-INDUCED MOSFET DEGRADATION

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作者：
MAHNKOPF, R
PRZYREMBEL, G
WAGEMANN, HG
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JOURNAL DE PHYSIQUE | 1988年 / 49卷 / C-4期
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D O I：
10.1051/jphyscol:19884161
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页码：771 / 774
页数：4
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