MBE growth and characterization of high purity GaAs/AlGaAs on the (110) surface of GaAs

被引：4
|
作者：
Sorensen, CB [1 ]
Gislason, H [1 ]
Birkedal, D [1 ]
Hvam, JM [1 ]
机构：
[1] TECH UNIV DENMARK,MIKROELEKTRON CTR,DK-2800 LYNGBY,DENMARK
来源：
MICROELECTRONICS JOURNAL | 1995年 / 26卷 / 08期
关键词：
D O I：
10.1016/0026-2692(95)00035-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An improved quality of (110) GaAs has been grown by molecular beam epitaxy using As-2 in lieu of As-4. The most pronounced effect of using As-2 is a higher doping efficiency of Si delta-doped GaAs layers, resulting in a mobility of the (110) layers, comparable to the reference (100) samples. The high quality of the (110) GaAs was confirmed by low temperature photoluminescence. The spectrum of the GaAs layer shows a single dominant free exciton line with a linewidth of 1.0 meV.
引用
收藏
页码：767 / 773
页数：7
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