METASTABLE DEFECTS IN GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION - DEPENDENCE ON THE V/III-RATIO

被引：13

作者：

TABATA, AS ^{[1
]}

PUDENZI, MAA ^{[1
]}

MACHADO, AM ^{[1
]}

机构：

[1] CTR PESQUISA & DESENVOLVIMENTO TELEBRAS, CAMPINAS, SP, BRAZIL

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 10期

关键词：

D O I：

10.1063/1.343338

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4076 / 4078

页数：3

共 50 条

[1] HEAVY CARBON DOPING IN METALORGANIC CHEMICAL VAPOR-DEPOSITION FOR GAAS USING A LOW V/III-RATIO
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[7] METALORGANIC CHEMICAL VAPOR-DEPOSITION OF III-V SEMICONDUCTORS
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[8] DEFECTS IN HIGH-PURITY GAAS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION
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[9] CHARACTERIZATION OF EPITAXIALLY GROWN GAAS ON SI SUBSTRATES WITH III-V COMPOUNDS INTERMEDIATE LAYERS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
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[10] MATERIAL AND DEVICE PROPERTIES OF GAAS ON SAPPHIRE GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
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