共 50 条
- [21] RE-EMISSION EFFECTS IN A VARIABLE-GAP P-N STRUCTURE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (05): : 552 - 555
- [22] SUPERINJECTION OF CARRIERS IN VARIABLE-GAP P - N STRUCTURES. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1975, 9 (01): : 6 - 10
- [23] SPECTRAL DEPENDENCE OF THE AVALANCHE MULTIPLICATION COEFFICIENT OF A VARIABLE-GAP P-N STRUCTURE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (04): : 473 - 474
- [24] TEMPERATURE-DEPENDENCE OF QUANTUM EFFICIENCY OF ELECTROLUMINESCENCE OF GAP P-N STRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (08): : 965 - 967
- [25] PHOTOELECTRIC PROPERTIES OF VARIABLE-GAP AU-GA1-XAIXAS STRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (05): : 579 - 581
- [26] ELECTROLUMINESCENT S-TYPE DIODES MADE OF VARIABLE-GAP GA1-XALXAS-SI P-SI-N STRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (07): : 943 - 944
- [27] VOLTAGE INTERCEPT OF P+-N-N+ STRUCTURES WITH VARIABLE-GAP N-TYPE BASES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (02): : 172 - 175
- [28] PHOTOELECTRIC EFFECT IN A VARIABLE-GAP P-N STRUCTURE UNDER BAND IMPURITY RADIATIVE RECOMBINATION CONDITIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (05): : 553 - 556
- [29] PHOTOELECTRIC EFFECT IN A VARIABLE-GAP P-N STRUCTURE UNDER CONDITIONS OF GENERATION OF RECOMBINATION RADIATION AND ITS ABSORPTION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (05): : 486 - 489
- [30] INVESTIGATION OF P-N PB0.8SN0.2TE-PBTE HETEROJUNCTIONS WITH A VARIABLE-GAP REGION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (09): : 1020 - 1022