共 50 条
- [1] PHOTOSENSITIVITY SPECTRA OF VARIABLE-GAP GA1-XALXP P-N STRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (01): : 79 - 81
- [2] PHOTOELECTRIC EFFECT IN VARIABLE-GAP GA1-XALXP SURFACE-BARRIER STRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (01): : 64 - 66
- [3] VARIABLE-GAP GA1-XALXSB P-N STRUCTURES AND THEIR PROPERTIES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (07): : 748 - 751
- [4] ELECTROLUMINESCENCE OF VARIABLE-GAP GA1-XALXSB P-N STRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (09): : 1038 - 1040
- [6] SELECTIVE PHOTOELECTRIC EFFECT IN VARIABLE-GAP GA1-XAIXSB P-N STRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (02): : 155 - 157
- [7] SUPERINJECTION OF CARRIERS IN VARIABLE-GAP P-N STRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (01): : 6 - 10
- [8] RECOMBINATION CURRENTS IN VARIABLE-GAP P-N STRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (06): : 685 - 686
- [9] CATHODOLUMINESCENCE OF P-N STRUCTURES MADE OF GA1-XALXP (0.1 LESS-THAN-OR-EQUAL-TO 0.65) SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (04): : 476 - 477
- [10] SELECTIVE PHOTOCELLS BASED ON VARIABLE-GAP GA1-XALXAS-SI P-N STRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (07): : 954 - 955