INVESTIGATION OF PERSISTENT PHOTOCONDUCTIVITY FROM COMPENSATED AMORPHOUS HYDROGENATED SILICON

The decay of persistent photoconductivity from compensated amorphous hydrogenated silicon obeys a power law time dependence in the first five hours and an exponential dependence thereafter. Photoconductivity and persistent photoconductivity both increase with illumination time and follow a power law dependence on light intensity, sigmaalphaF(gamma), although the values of gamma are different. Interesting phenomena were observed from prolonged exposure of 200 mW cm-2. All the results mentioned above can be qualitatively explained by our model previously proposed for nipi ... multilayers, which involves P-B deep-trap and P-B-H shallow-trap complexes. It is also predicted that the new states introduced by compensation are possibly associated with complexes involving phosphorus, boron and hydrogen.