ZN GETTERING IN INGAAS/INP INTERFACES

被引:19
|
作者
GEVA, M
SEIDEL, TE
机构
关键词
D O I
10.1063/1.336342
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2408 / 2415
页数:8
相关论文
共 50 条
  • [31] Zn solubility and Fermi energy pinning in InP and InGaAs: growth vs. equilibrium
    Tandon, A
    Cohen, RM
    Ervin, M
    Lareau, R
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 63 (03): : 205 - 210
  • [32] Post-growth Zn diffusion into InGaAs/InP in a LP-MOVPE reactor
    Franke, D
    Reier, FW
    Grote, N
    JOURNAL OF CRYSTAL GROWTH, 1998, 195 (1-4) : 112 - 116
  • [33] ZN-DIFFUSION-INDUCED INTERMIXING OF INGAAS/INP MULTIPLE QUANTUM WELL STRUCTURES
    NAKASHIMA, K
    KAWAGUCHI, Y
    KAWAMURA, Y
    IMAMURA, Y
    ASAHI, H
    APPLIED PHYSICS LETTERS, 1988, 52 (17) : 1383 - 1385
  • [34] Investigation of the Influence of Zn-diffusion profile on the electrical properties of InGaAs/InP photodiodes
    Djedidi, A.
    Rouvie, A.
    Reverchon, J. L.
    Pires, M.
    Chevalier, N.
    Mariolle, D.
    2012 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), 2013, : 110 - 112
  • [35] Effects of Zn Doped Mesa Sidewall on Gain Enhanced InGaAs/InP Heterobipolar Phototransistor
    Ogura, Mutsuo
    Choi, Sung Woo
    Furue, Shigenori
    Hayama, Nobuyuki
    Nishida, Katsuhiko
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2010, 46 (02) : 214 - 219
  • [36] Quantitative depth profile analysis of InP/InGaAs hetero-interfaces by as carry-over
    Choi, Minhyuk
    Jung, In-Young
    Song, Seungwoo
    Kim, Chang Soo
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2020, 120
  • [37] INTRINSIC STRAIN AT SLIGHTLY MISMATCHED INGAAS/INP INTERFACES AS STUDIED BY TRANSMISSION ELECTRON-MICROSCOPY
    ANDROUSSI, Y
    LEFEBVRE, A
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1992, 129 (02): : 467 - 474
  • [38] LF noise analysis of InP/GaAsSb/InP and InP/InGaAs/InP HBTs
    Maneux, C.
    Grandchamp, B.
    Labat, N.
    Touboul, A.
    Riet, M.
    Godin, J.
    Bove, Ph.
    2006 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, 2006, : 468 - +
  • [39] MOVPE growth for an integrated InGaAs/InP PIN-HBT receiver using Zn-doped p(+)-InGaAs layers
    Eisenbach, A
    Goldhorn, A
    Kuphal, E
    Mause, K
    JOURNAL OF CRYSTAL GROWTH, 1997, 170 (1-4) : 451 - 455
  • [40] Influence of the spin-orbit split-off band on the tunneling properties of holes across InAlAs/InGaAs and InP/InGaAs interfaces
    Ekbote, S
    Cahay, M
    Roenker, K
    PROCEEDINGS OF THE FIFTH INTERNATIONAL SYMPOSIUM ON QUANTUM CONFINEMENT: NANOSTRUCTURES, 1999, 98 (19): : 597 - 617