ELECTRONIC BAND-STRUCTURE AND OPTICAL-PROPERTIES OF CUBIC SILICON-CARBIDE CRYSTALS

The electroreflectance spectra of cubic silicon carbide crystals are measured in the range 1.0 to 5.6 eV. The energies of direct optical transitions are determined using a multiple oscillator model. The electronic band structure and optical functions of 3C-SiC crystals are calculated by semiempirical pseudopotential methods. From comparison between theoretical and experimental optical spectra numerical parameters of electronic band structure 3C-SiC are obtained, and values of atomic form factors of carbon atoms, giving the realistic band structure and optical spectra of 3C-SiC, are determined.