TWO-DIMENSIONAL PARTICLE MODELING OF SUBMICROMETER GATE GAAS-FET NEAR PINCHOFF

被引：25
|
作者：
PONE, JF [1 ]
CASTAGNE, RC [1 ]
COURAT, JP [1 ]
ARNODO, C [1 ]
机构：
[1] THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 08期
关键词：
D O I：
10.1109/T-ED.1982.20863
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1244 / 1255
页数：12
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