EXCESS CARRIER LIFETIMES IN THE SILICON DOPING SUPERLATTICE

被引：4

作者：

LEITH, GA ^{[1
]}

ZUKOTYNSKI, S ^{[1
]}

LANDHEER, D ^{[1
]}

DENHOFF, MW ^{[1
]}

BUCHANAN, M ^{[1
]}

机构：

[1] NATL RES COUNCIL CANADA,MICROSTRUCT SCI LAB,OTTAWA K1A 0R6,ONTARIO,CANADA

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 16期

关键词：

D O I：

10.1063/1.101312

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1558 / 1560

页数：3

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