EXCESS CARRIER LIFETIMES IN THE SILICON DOPING SUPERLATTICE

被引：4
|
作者：
LEITH, GA [1 ]
ZUKOTYNSKI, S [1 ]
LANDHEER, D [1 ]
DENHOFF, MW [1 ]
BUCHANAN, M [1 ]
机构：
[1] NATL RES COUNCIL CANADA,MICROSTRUCT SCI LAB,OTTAWA K1A 0R6,ONTARIO,CANADA
来源：
APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 16期
关键词：
D O I：
10.1063/1.101312
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1558 / 1560
页数：3
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