MEBN-MESI2-SI DOUBLE-LAYER FILM STRUCTURE SYNTHESIS

被引：0
|
作者：
TOKAREV, VV
机构：
[1] Institute of Solid State and Semiconductor Physics, BSSR Academy of Sciences, 220726 Minsk
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1991年 / 8卷 / 01期
关键词：
D O I：
10.1016/0921-5107(91)90016-O
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Auger electron spectroscopy, X-ray diffraction and Rutherford electron microscopy were used to study the synthesis of an MeB(n)-MeSi2-Si<100>double-layer film structure. It is shown that double-layer boride-silicide structures with sharp boundaries can be formed by implantation of boron ions to a fluence in excess of 10(17) ion cm-2 into a preliminary Me-MeSi(x)-Si<100> structure formed by pulse-heating. The study revealed that boride and silicide layers in the structure have properties characteristic of monolayers.
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页码：39 / 43
页数：5
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