共 50 条
- [43] STRENGTH OF INFRARED-ABSORPTION FROM SILICON DONORS AND SILICON ACCEPTORS IN GALLIUM-ARSENIDE JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (24): : 4503 - 4510
- [45] CHARACTERISTICS OF THE PHOTOIONIZATION OF DEEP LEVELS IN GALLIUM ARSENIDE AND GaAs1 - xSbx FILMS. Soviet physics. Semiconductors, 1983, 17 (02): : 202 - 205
- [46] PHOTOIONIZATION SPECTRA OF DEEP LEVELS IN GALLIUM-ARSENIDE PREPARED BY LIQUID-PHASE EPITAXY SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (02): : 151 - 153
- [48] Formation of clusters and the magnetooptical Kerr effect in gallium arsenide implanted with manganese ions Physics of the Solid State, 2005, 47 : 1626 - 1629