PHOTOEXCITATION AND PHOTOIONIZATION OF NEUTRAL MANGANESE ACCEPTORS IN GALLIUM ARSENIDE

被引:129
|
作者
CHAPMAN, RA
HUTCHINSON, WG
机构
关键词
D O I
10.1103/PhysRevLett.18.443
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:443 / +
页数:1
相关论文
共 50 条
  • [41] Gallium arsenide
    Nguyen, Ryan H.
    IEEE Potentials, 1999, 17 (05): : 33 - 35
  • [43] STRENGTH OF INFRARED-ABSORPTION FROM SILICON DONORS AND SILICON ACCEPTORS IN GALLIUM-ARSENIDE
    LAITHWAITE, K
    NEWMAN, RC
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (24): : 4503 - 4510
  • [44] Element resolved spin configuration in ferromagnetic manganese-doped gallium arsenide
    Keavney, DJ
    Wu, D
    Freeland, JW
    Johnston-Halperin, E
    Awschalom, DD
    Shi, J
    PHYSICAL REVIEW LETTERS, 2003, 91 (18) : 187203 - 187203
  • [45] CHARACTERISTICS OF THE PHOTOIONIZATION OF DEEP LEVELS IN GALLIUM ARSENIDE AND GaAs1 - xSbx FILMS.
    Bobylev, B.A.
    Marchenko, N.E.
    Chikichev, S.I.
    Kravchenko, A.F.
    Yudaev, V.I.
    Khairi, E.Kh.
    Soviet physics. Semiconductors, 1983, 17 (02): : 202 - 205
  • [46] PHOTOIONIZATION SPECTRA OF DEEP LEVELS IN GALLIUM-ARSENIDE PREPARED BY LIQUID-PHASE EPITAXY
    BOBYLEV, BA
    KALUKHOV, VA
    TORCHINOV, KMZ
    CHIKICHEV, SI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (02): : 151 - 153
  • [47] DIFFUSION OF ZINC, MANGANESE, AND SULFUR IN GALLIUM ARSENIDE, AND A METHOD FOR CONTROLLING THE SURFACE CONCENTRATION
    JONES, ME
    KENDALL, DL
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (08) : C198 - C198
  • [48] Formation of clusters and the magnetooptical Kerr effect in gallium arsenide implanted with manganese ions
    Yu. A. Danilov
    A. V. Kruglov
    M. Behar
    M. C. dos Santos
    L. G. Pereira
    J. E. Schmidt
    Physics of the Solid State, 2005, 47 : 1626 - 1629
  • [49] Formation of clusters and the magnetooptical Kerr effect in gallium arsenide implanted with manganese ions
    Danilov, YA
    Kruglov, AV
    Behar, M
    dos Santos, MC
    Pereira, LG
    Schmidt, JE
    PHYSICS OF THE SOLID STATE, 2005, 47 (09) : 1626 - 1629
  • [50] MANGANESE INCORPORATION BEHAVIOR IN MOLECULAR-BEAM EPITAXIAL GALLIUM-ARSENIDE
    DESIMONE, D
    WOOD, CEC
    EVANS, CA
    JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) : 4938 - 4942