ORIENTATION DEPENDENCE OF LATTICE STRAIN IN SILICON EPITAXIAL WAFERS

被引：5
|
作者：
MIHARA, M
HARA, T
ARAI, M
NAKAJIMA, M
NAKAMURA, S
机构：
[1] MATSUSHITA RES INST TOKYO INC,TAMA KU,KAWASAKI,JAPAN
[2] MATSUSHITA ELECTR IND CO LTD,CENT RES LAB,MORIGUCHI,OSAKA,JAPAN
来源：
APPLIED PHYSICS LETTERS | 1976年 / 29卷 / 01期
关键词：
D O I：
10.1063/1.88879
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1 / 3
页数：3
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