ANGULAR-DEPENDENCE OF BACKSCATTERING YIELD FROM SI CRYSTALS IN DOUBLE AND SINGLE ALIGNMENT

被引：20

作者：

MORITA, K

机构：

[1] UNIV MUNICH,SEKT PHYS,MUNICH,FED REP GER

[2] UNIV NAGOYA,FAC ENGN,DEPT NUCL ENGN,NAGOYA,JAPAN

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1976年 / 28卷 / 1-2期

关键词：

D O I：

10.1080/00337577608233029

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：65 / 75

页数：11

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