FERMI-LEVEL EFFECTS IN A-SI-H PHOTOCONDUCTIVITY

被引：34
|
作者：
KAGAWA, T
MATSUMOTO, N
KUMABE, K
机构：
来源：
PHYSICAL REVIEW B | 1983年 / 28卷 / 08期
关键词：
D O I：
10.1103/PhysRevB.28.4570
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：4570 / 4578
页数：9
相关论文
共 50 条
  • [1] FERMI-LEVEL EFFECT ON A-SI-H PHOTOCONDUCTIVITY
    KAGAWA, T
    MATSUMOTO, N
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 465 - 468
  • [2] ON THE FERMI-LEVEL POSITION IN A-SI-H(P)
    KAZANSKII, AG
    FUHS, W
    MELL, H
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1990, 160 (01): : K25 - K28
  • [3] CORRELATION BETWEEN DEFECT DENSITY AND FERMI-LEVEL POSITION IN A-SI-H
    PIERZ, K
    FUHS, W
    MELL, H
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 114 : 651 - 653
  • [4] THE DEPENDENCIES OF THE 2 CARRIER MOBILITY-LIFETIME PRODUCTS ON THE POSITION OF THE FERMI-LEVEL IN A-SI-H
    LUBIANIKER, Y
    BALBERG, I
    WEISZ, SZ
    GOMEZ, M
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1993, 164 : 399 - 402
  • [5] THE EFFECTS OF BAND BENDING ON THE PHOTOCONDUCTIVITY IN A-SI-H
    JACKSON, WB
    THOMPSON, MJ
    PHYSICA B & C, 1983, 117 (MAR): : 883 - 885
  • [6] TRANSIENT PHOTOCONDUCTIVITY IN A-SI-H
    STREET, RA
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 635 - 638
  • [7] FERMI-LEVEL EFFECTS ON PHOTOCONDUCTIVITY DURING OPTICAL DEGRADATION OF AMORPHOUS-SILICON
    BUBE, RH
    BENATAR, LE
    GRIMBERGEN, MN
    REDFIELD, D
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1994, 169 (1-2) : 47 - 53
  • [8] SPECTRAL VARIATION OF PHOTOCONDUCTIVITY IN A-SI-H
    SCHETZINA, JF
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1979, 24 (03): : 400 - 400
  • [9] INFRARED PHOTOCONDUCTIVITY SPECTRA OF A-SI-H
    KUROVA, IA
    ORMONT, NN
    KAZANSKII, AG
    VAVILOV, VS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (08): : 971 - 972
  • [10] A PHYSICOCHEMICAL INTERPRETATION OF THE PHOTOCONDUCTIVITY OF A-SI-H
    HAMDI, H
    DENEUVILLE, A
    BRUYERE, JC
    JOURNAL DE PHYSIQUE LETTRES, 1983, 44 (07): : L265 - L269
12345