ON THE FERMI-LEVEL POSITION IN A-SI-H(P)

被引：3

作者：

KAZANSKII, AG ^{[1
]}

FUHS, W ^{[1
]}

MELL, H ^{[1
]}

机构：

[1] UNIV MARBURG,ZENTRUM MAT WISSENSCH,FACHBEREICH PHYS & WISSENSCH,W-3550 MARBURG,GERMANY

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1990年 / 160卷 / 01期

关键词：

D O I：

10.1002/pssb.2221600143

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

[No abstract available]

引用

页码：K25 / K28

页数：4

共 50 条

[1] CORRELATION BETWEEN DEFECT DENSITY AND FERMI-LEVEL POSITION IN A-SI-H
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[2] FERMI-LEVEL EFFECT ON A-SI-H PHOTOCONDUCTIVITY
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[3] FERMI-LEVEL EFFECTS IN A-SI-H PHOTOCONDUCTIVITY
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[4] THE DEPENDENCIES OF THE 2 CARRIER MOBILITY-LIFETIME PRODUCTS ON THE POSITION OF THE FERMI-LEVEL IN A-SI-H
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[5] INSITU MEASUREMENTS OF THE FERMI LEVEL POSITION IN UNDOPED AND DOPED A-SI-H FILMS
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[6] DETERMINATION OF THE FERMI-LEVEL PINNING POSITION AT SI(111) SURFACES
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[7] BAND EDGES, FERMI LEVEL POSITION, AND HYDROGEN CONCENTRATION IN SURFACE NEAR REGIONS OF A-SI-H
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[8] EVALUATION OF THE FERMI-LEVEL POSITION IN STRONTIUM-TITANATE
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[9] FERMI-LEVEL POSITION AT A SEMICONDUCTOR-METAL INTERFACE
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[10] ANALYSIS OF FERMI-LEVEL POSITION IN THIN POLYSILICON FILMS
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