BEAM PROFILE AND EMITTANCE MEASUREMENTS FOR ION-IMPLANTATION

For ion implantation the current density distribution of the beam is an important quantity, since it determines strongly the homogeneity of the implantation profiles. In our experiment the beam profile is measured by a grid and can be monitored during implantation. More information, as intrinsic and total beam angle, can be achieved by using an emittance measurement device. In our device the emittance is measured in combination with mass separation, which yields additional information concerning the beam composition and the beam parameters of each component. The beam diagnostic equipment is discussed. Results on beam measurements at an implantation device, which consists of an ion source equipped with a pentode extraction system, are presented.