HETEROEPITAXY OF INSULATOR METAL SILICON STRUCTURES - CAF2/NISI2/SI(111) AND CAF2/COSI2/SI(111)

被引：19
|
作者：
FATHAUER, RW
HUNT, BD
SCHOWALTER, LJ
OKAMOTO, M
HASHIMOTO, S
机构：
[1] GE,CTR CORP RES & DEV,POB 8,SCHENECTADY,NY 12301
[2] SUNY ALBANY,DEPT PHYS,ALBANY,NY 12222
来源：
APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 02期
关键词：
D O I：
10.1063/1.97353
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：64 / 66
页数：3
相关论文
共 50 条
  • [41] Atomic structure and interface states at CaF2/Si (111)
    Fujitani, Hideaki, 1600, (27):
  • [42] Epitaxy of CaF2/Si(111) and LiF/Ge(100)
    Himpsel, F.J.
    Hunan Shifan Daxue Ziran Kexue Xuebao/Natural Sciences Journal of Hunan Normal University, 1994, 17 (03):
  • [43] Epitaxial growth of BeZnSe on CaF2/Si(111) substrate
    Maruyama, T
    Nakamura, N
    Watanabe, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (8A): : L876 - L877
  • [44] BAND DISPERSION OF AN INTERFACE STATE - CAF2/SI(111)
    MCLEAN, AB
    HIMPSEL, FJ
    PHYSICAL REVIEW B, 1989, 39 (02): : 1457 - 1460
  • [45] ELECTRONIC-STRUCTURE OF THE CAF2/SI(111) INTERFACE
    SALEHPOUR, MR
    SATPATHY, S
    DAS, GP
    PHYSICAL REVIEW B, 1991, 44 (16): : 8880 - 8885
  • [46] ELECTRONIC-STRUCTURE OF THE CAF2/SI(111) INTERFACE
    RIEGER, D
    HIMPSEL, FJ
    KARLSSON, UO
    MCFEELY, FR
    MORAR, JF
    YARMOFF, JA
    PHYSICAL REVIEW B, 1986, 34 (10): : 7295 - 7306
  • [47] OPTIMIZATION OF GAAS EPITAXY ON CAF2/SI(111) SUBSTRATES
    LI, WD
    ANAN, T
    SCHOWALTER, LJ
    JOURNAL OF CRYSTAL GROWTH, 1994, 135 (1-2) : 78 - 84
  • [48] NEW INSIGHT INTO THE STRUCTURE AND GROWTH OF CAF2/SI(111)
    LUCAS, CA
    LORETTO, D
    APPLIED PHYSICS LETTERS, 1992, 60 (17) : 2071 - 2073
  • [49] STRAIN RELIEF DURING GROWTH - CAF2 ON SI(111)
    TROMP, RM
    LEGOUES, FK
    REUTER, MC
    PHYSICAL REVIEW LETTERS, 1995, 74 (14) : 2706 - 2709
  • [50] Epitaxial growth of BeZnSe on CaF2/Si(111) substrate
    Maruyama, Takeo
    Nakamura, Naoto
    Watanabe, Masahiro
    Japanese Journal of Applied Physics, Part 2: Letters, 2002, 41 (8 A):
12345