RAMAN INVESTIGATIONS ON DIAMOND FILMS AND CRYSTALS DEPOSITED BY PLASMA-ASSISTED CVD

被引:58
|
作者
BOU, P
VANDENBULCKE, L
机构
[1] Centre de Recherches sur la Chime de la Combustion et des Hautes Temperatures
关键词
D O I
10.1149/1.2085354
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Microwave plasma-assisted chemical vapor deposition has been utilized to deposit thin diamond films on molybdenum substrates. Micro-Raman spectroscopy has been carried out to examine the influence of the crystal size, laser power, and incident wavelength. A computer decomposition of Raman spectra has been attempted that permits appreciation of the evolution of deposit quality with experimental changes, through variations in spectrum contributions. We finally discuss the importance of the resonance Raman effect for sp2-type defect characterization, and the disorganization level provided by unequal light coupling with different cluster size.
引用
收藏
页码:2991 / 3000
页数:10
相关论文
共 50 条
  • [1] IN-SITU RAMAN MONITORING OF THE GROWTH OF DIAMOND FILMS IN PLASMA-ASSISTED CVD REACTORS
    MERMOUX, M
    FAYETTE, L
    MARCUS, B
    ROSMAN, N
    ABELLO, L
    LUCAZEAU, G
    DIAMOND AND RELATED MATERIALS, 1995, 4 (5-6) : 745 - 749
  • [2] Annealing studies of TiN films deposited by plasma-assisted CVD
    Cheng, Z
    Peng, HR
    Xie, GW
    Shi, YL
    SURFACE & COATINGS TECHNOLOGY, 2001, 138 (2-3): : 237 - 241
  • [3] Thermal diffusivity of diamond wafers deposited with multicathode dc plasma-assisted CVD
    Chae, HB
    Park, H
    Hong, JS
    Han, YJ
    Joo, Y
    Baik, YJ
    Lee, JK
    Lee, SW
    INTERNATIONAL JOURNAL OF THERMOPHYSICS, 2001, 22 (02) : 645 - 654
  • [4] Thermal Diffusivity of Diamond Wafers Deposited with Multicathode dc Plasma-Assisted CVD
    H.-B. Chae
    H. Park
    J.-S. Hong
    Y.-J. Han
    Y. Joo
    Y.-J. Baik
    J.-K. Lee
    S.-W. Lee
    International Journal of Thermophysics, 2001, 22 : 645 - 654
  • [5] Diamond films grown by millimeter wave plasma-assisted CVD reactor
    Vikharev, A. L.
    Gorbachev, A. M.
    Kozlov, A. V.
    Koldanov, V. A.
    Litvak, A. G.
    Ovechkin, N. M.
    Radishev, D. B.
    Bykov, Yu. V.
    Caplan, M.
    DIAMOND AND RELATED MATERIALS, 2006, 15 (4-8) : 502 - 507
  • [6] PREDICTION OF THE FEASIBILITY OF ORIENTED DIAMOND FILMS BY MICROWAVE PLASMA-ASSISTED CVD
    BARRAT, S
    BAUERGROSSE, E
    DIAMOND AND RELATED MATERIALS, 1995, 4 (04) : 419 - 424
  • [7] IN-SITU RAMAN MONITORING OF THE GROWTH OF THIN-FILMS IN PLASMA-ASSISTED CVD REACTORS - GROWTH OF DIAMOND FILMS
    MERMOUX, M
    FAYETTE, L
    MARCUS, B
    ROSMAN, N
    ABELLO, L
    LUCAZEAU, G
    CHABERT, JP
    ANALUSIS, 1995, 23 (02) : M19 - M21
  • [8] Boron doped diamond deposited by microwave plasma-assisted CVD at low and high pressures
    Ramamurti, R.
    Becker, M.
    Schuelke, T.
    Grotjohn, T.
    Reinhard, D.
    Swain, G.
    Asmussen, J.
    DIAMOND AND RELATED MATERIALS, 2008, 17 (4-5) : 481 - 485
  • [9] Electrical properties of plasma-assisted CVD deposited thin silicon oxynitride films
    Szekeres, A
    Simeonov, S
    Gushterov, A
    Nikolova, T
    Hamelmann, F
    Heinzmann, U
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2005, 7 (01): : 553 - 556
  • [10] DIAMOND DEPOSITION ON POROUS SILICON BY PLASMA-ASSISTED CVD
    SPITZL, R
    RAIKO, V
    ENGEMANN, J
    DIAMOND AND RELATED MATERIALS, 1994, 3 (10) : 1256 - 1261