DONOR LEVELS IN SI-DOPED ALGAAS GROWN BY MBE

被引：86
|
作者：
WATANABE, MO
MORIZUKA, K
MASHITA, M
ASHIZAWA, Y
ZOHTA, Y
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 02期
关键词：
D O I：
10.1143/JJAP.23.L103
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L103 / L105
页数：3
相关论文
共 50 条
  • [21] MORPHOLOGICAL DEFECTS ON BE-DOPED ALGAAS LAYERS GROWN BY MBE
    LIU, WC
    GUO, DF
    SUN, CY
    LOUR, WS
    JOURNAL OF CRYSTAL GROWTH, 1991, 114 (04) : 700 - 706
  • [22] PHOTOLUMINESCENCE FROM HIGHLY BE-DOPED ALGAAS GROWN BY MBE
    MORITA, M
    KOBAYASHI, K
    SUZUKI, T
    OKANO, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (03): : 553 - 554
  • [23] Photoluminescence from highly Be-doped AlGaAs grown by MBE
    Morita, Masahiko, 1600, (28):
  • [24] LATERAL JUNCTIONS OF MOLECULAR-BEAM EPITAXIAL GROWN SI-DOPED GAAS AND ALGAAS ON PATTERNED SUBSTRATES
    TAKAMORI, T
    KAMIJOH, T
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (01) : 187 - 191
  • [25] EFFECTS OF HYDROGENATION OF DEEP AND SHALLOW LEVELS IN ALGAAS GROWN BY MBE
    BOSACCHI, A
    FRANCHI, S
    GOMBIA, E
    MOSCA, R
    BIGNAZZI, A
    GRILLI, E
    GUZZI, M
    ZAMBONI, R
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1994, 28 (1-3): : 425 - 428
  • [26] Effects of hydrogenation of deep and shallow levels in AlGaAs grown by MBE
    Bossachi, A.
    Franchi, S.
    Gombia, E.
    Mosca, R.
    Bignazzi, A.
    Grilli, E.
    Guzzi, M.
    Zamboni, R.
    Materials science & engineering. B, Solid-state materials for advanced technology, 1994, B28 (1-3): : 425 - 428
  • [27] Highly uniform Si-doped GaAs epitaxial layers grown by MBE using a TEG, arsenic, and silicon system
    Ono, Katsuji, 1600, (29):
  • [28] OBSERVATION OF A VACANCY AT THE DX CENTER IN SI-DOPED AND SN-DOPED ALGAAS
    MAKINEN, J
    LAINE, T
    SAARINEN, K
    HAUTOJARVI, P
    CORBEL, C
    AIRAKSINEN, VM
    GIBART, P
    PHYSICAL REVIEW LETTERS, 1993, 71 (19) : 3154 - 3157
  • [29] HIGHLY UNIFORM SI-DOPED GAAS EPITAXIAL LAYERS GROWN BY MBE USING A TEG, ARSENIC, AND SILICON SYSTEM
    ONO, K
    SAITO, J
    NANBU, K
    KONDO, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (07): : 1248 - 1249
  • [30] STUDY OF GAMMA-DONOR, L-DONOR AND X-DONOR STATES IN SI-DOPED ALGAAS BY PRESSURE DEPENDENT HALL MEASUREMENTS
    GOUTIERS, B
    DMOWSKI, L
    RANZ, E
    PORTAL, JC
    CHAND, N
    APPLIED PHYSICS LETTERS, 1991, 59 (14) : 1740 - 1742
12345