DONOR LEVELS IN SI-DOPED ALGAAS GROWN BY MBE

被引：86
|
作者：
WATANABE, MO
MORIZUKA, K
MASHITA, M
ASHIZAWA, Y
ZOHTA, Y
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 02期
关键词：
D O I：
10.1143/JJAP.23.L103
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：L103 / L105
页数：3
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