NEUTRON-INDUCED TYPE CHANGES IN P-TYPE SILICON

被引：3
|
作者：
URLI, NB
PERSIN, M
机构：
来源：
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1967年 / 28卷 / 08期
关键词：
D O I：
10.1016/0022-3697(67)90296-X
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
引用
收藏
页码：1627 / &
相关论文
共 50 条
  • [41] NOISE AND DIFFUSION IN P-TYPE SILICON
    NOUGIER, JP
    MOATADID, A
    VAISSIERE, JC
    JOURNAL DE PHYSIQUE, 1988, 49 (C-4): : 165 - 168
  • [42] GALVANOMAGNETIC EFFECTS IN P-TYPE SILICON
    LONG, D
    PHYSICAL REVIEW, 1957, 107 (03): : 672 - 677
  • [43] Piezoresistance effect in p-type silicon
    Kanda, Y
    Matsuda, K
    Physics of Semiconductors, Pts A and B, 2005, 772 : 79 - 80
  • [44] AMORPHOUS SILICON ON P-TYPE CRYSTALLINE SILICON HETEROJUNCTION
    ABOULSEOUD, AK
    MOKHTAR, O
    REVUE DE PHYSIQUE APPLIQUEE, 1978, 13 (12): : 641 - 644
  • [45] PHOTOELECTROCHEMISTRY OF N-TYPE AND P-TYPE SILICON IN ACETONITRILE
    BYKER, HJ
    WOOD, VE
    AUSTIN, AE
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (09) : 1982 - 1987
  • [46] PARAMAGNETIC RESONANCE IN N-TYPE AND P-TYPE SILICON
    WILLENBROCK, FK
    BLOEMBERGEN, N
    PHYSICAL REVIEW, 1953, 91 (05): : 1281 - 1281
  • [47] Hydrogen interaction with implantation induced point defects in p-type silicon
    Fatima, S
    Jagadish, C
    Lalita, J
    Svensson, BG
    Hállen, A
    JOURNAL OF APPLIED PHYSICS, 1999, 85 (05) : 2562 - 2567
  • [48] ILLUMINATION INDUCED ANNEALING IN ELECTRON-IRRADIATED P-TYPE SILICON
    NAKASHIMA, K
    PHYSICS LETTERS A, 1973, A 42 (07) : 533 - 534
  • [49] Strain induced effects in p-type silicon whiskers at low temperatures
    Druzhinin, A. A.
    Maryamova, I. I.
    Kutrakov, O. P.
    Liakh-Kaguy, N. S.
    Palewski, T.
    FUNCTIONAL MATERIALS, 2012, 19 (03): : 325 - 329
  • [50] Direct measurement of electron beam induced currents in p-type silicon
    Han, Myung-Geun
    Zhu, Yimei
    Sasaki, Katsuhiro
    Kato, Takeharu
    Fisher, Craig A. J.
    Hirayama, Tsukasa
    SOLID-STATE ELECTRONICS, 2010, 54 (08) : 777 - 780
12345