共 50 条
- [21] SPECTRUM OF DEFECTS RESPONSIBLE FOR BREAKDOWN OF POLY-SIN+-SIO2-SI AND AL-SIO2-SI STRUCTURES SOVIET MICROELECTRONICS, 1986, 15 (06): : 272 - 276
- [22] Low-temperature PECVD SiO2 on Si and SiC POWER SEMICONDUCTOR MATERIALS AND DEVICES, 1998, 483 : 147 - 153
- [29] EFFECT OF 1. 3 Mev ELECTRON RADIATION ON Al-SiO2-Si(n) SYSTEM. Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1983, 4 (01): : 64 - 68
- [30] INTERACTION OF SHOCK-WAVES WITH SURFACES OF SI SINGLE-CRYSTALS AND FILMS IN SIO2-SI AND AL-SIO2-SI SYSTEMS IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1981, (10): : 112 - 115