LOW-TEMPERATURE ANNEALING IN AL-SIO2-SI SYSTEM

被引：0

作者：

BALK, P

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1965年 / 112卷 / 08期

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暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C185 / &

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[1] INTERACTION OF LOW-TEMPERATURE H, O AND CL PLASMA BEAMS, WITH SURFACES OF SI AND AL-SIO2-SI
MESHCHERYAKOV, NA
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1981, (11): : 106 - 108
[2] RADIATION-INDUCED CHANGES IN LOW-TEMPERATURE OXIDE MOS STRUCTURES (AL-SIO2-SI)
LITOVCHENKO, VG
KIBLICK, VY
GEORGIEV, SS
KIROV, KI
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1982, 62 (1-2): : 1 - 5
[3] LOW-TEMPERATURE ANNEALING OF AL-IMPLANTED SI-SIO2 STRUCTURES
ABERG, AT
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 42 (02): : 639 - 645
[4] FLASH LAMP ANNEALING AND RF PLASMA ANNEALING OF AL-SIO2-SI STRUCTURES
NAZAROV, AN
LYSENKO, VS
VALIEV, SA
LOKSHIN, MM
TKACHENKO, AS
KUNITSKII, IA
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1990, 120 (02): : 447 - 456
[5] SILICON WORK FUNCTION IN AL-SIO2-SI SYSTEM
PATER, K
SURFACE SCIENCE, 1988, 200 (2-3) : 187 - 191
[6] MANIFESTATION OF HYDROGEN IN AL-SIO2-SI STRUCTURES SUBJECTED TO A RF PLASMA ANNEALING
LYSENKO, VS
NAZAROV, AN
NAUMOVETS, GA
POPOV, VB
TKACHENKO, AS
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 112 (01): : K9 - K12
[7] EFFECT OF LOW TEMPERATURE ANNEALING ON SURFACE CONDUCTIVITY OF SI IN SI-SIO2-AL SYSTEM
CHEROFF, G
FANG, F
HOCHBERG, F
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) : 416 - &
[8] SURFACE CHARGE AFTER ANNEALING OF AL-SIO2-SI STRUCTURES UNDER BIAS
GOETZBERGER, A
NIGH, HE
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (10): : 1454 - +
[9] TEMPERATURE-DEPENDENCE OF TRANSIENT CAPACITANCE OF AL-SIO2-SI CAPACITORS
BHARAT, R
FITZGIBBONS, ET
LAPRADE, JE
APPLIED PHYSICS LETTERS, 1979, 34 (02) : 170 - 172
[10] EVIDENCE FOR PYROELECTRICITY IN AL-SIO2-SI STRUCTURES
THURZO, I
ACTA PHYSICA SLOVACA, 1980, 30 (02) : 179 - 182

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