GRAPHICAL ANALYSIS OF THE PARAMETERS AFFECTING THE VOLTAGE TOLERANCE IN SILICON P-N OR N-P JUNCTIONS

被引：1

|

作者：

CHUNG, TI

机构：

来源：

SOLID-STATE ELECTRONICS | 1964年 / 7卷 / 09期

关键词：

D O I：

10.1016/0038-1101(64)90055-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：687 / 693

页数：7

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