GRAPHICAL ANALYSIS OF THE PARAMETERS AFFECTING THE VOLTAGE TOLERANCE IN SILICON P-N OR N-P JUNCTIONS

被引：1
|
作者：
CHUNG, TI
机构：
来源：
SOLID-STATE ELECTRONICS | 1964年 / 7卷 / 09期
关键词：
D O I：
10.1016/0038-1101(64)90055-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：687 / 693
页数：7
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