FORMATION OF FESI2 FROM SINTERED FESI-FE2SI5 EUTECTIC ALLOY

被引：11
|
作者：
NISHIDA, I [1 ]
MASUMOTO, K [1 ]
OKAMOTO, M [1 ]
KOJIMA, T [1 ]
机构：
[1] SALESIAN POLYTECH,DEPT ELECT ENGN,TOKYO,JAPAN
来源：
TRANSACTIONS OF THE JAPAN INSTITUTE OF METALS | 1985年 / 26卷 / 05期
关键词：
D O I：
10.2320/matertrans1960.26.369
中图分类号：
TF [冶金工业];
学科分类号：
0806 ;
摘要：
18
引用
收藏
页码：369 / 374
页数：6
相关论文
共 50 条
  • [31] THERMOELECTRIC PROPERTIES OF SINTERED FESI2 WITH MICROSTRUCTURAL MODIFICATION
    OHTAKI, M
    OGURA, D
    EGUCHI, K
    ARAI, H
    CHEMISTRY LETTERS, 1993, (06) : 1067 - 1070
  • [32] Influence of Si growth temperature for embedding β+FeSi2 and resultant strain in β+FeSi2 on light emission from p-Si/β-FeSi2 particles/n-Si light-emitting diodes
    Suemasu, T
    Negishi, Y
    Takakura, K
    Hasegawa, F
    Chikyow, T
    APPLIED PHYSICS LETTERS, 2001, 79 (12) : 1804 - 1806
  • [33] AGGLOMERATION PROBLEMS IN THE FORMATION OF FESI2 FROM FE-SI THIN-FILM COUPLES
    SNELL, D
    IVEY, DG
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 1993, 4 (01) : 47 - 54
  • [34] SINTERED FESI2 FOR THERMOELECTRIC-POWER GENERATION
    STOHRER, U
    VOGGESBERGER, R
    WAGNER, G
    BIRKHOLZ, U
    ENERGY CONVERSION AND MANAGEMENT, 1990, 30 (02) : 143 - 147
  • [35] The effects of elements with different melting points on ε-FeSi size in FeSi2 alloy
    Kiatgamolchai, Somchai
    Nilpairach, Siriphan
    Wanichsampan, Jumpot
    Thueploy, Adisak
    JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 666 : 237 - 242
  • [36] Formation process of β-FeSi2/Si heterostructure in high-dose Fe ion implanted Si
    Ishimaru, M
    Omae, K
    Bae, IT
    Naito, M
    Hirotsu, Y
    Valdez, JA
    Sickafus, KE
    JOURNAL OF APPLIED PHYSICS, 2006, 99 (11)
  • [37] Anisotropic etching of microscale β-FeSi2 particles: Formation, mechanism, and quantum confinement of β-FeSi2 nanowhiskers
    He, J. Y.
    Wang, X.
    Wu, X. L.
    Chu, Paul K.
    RSC ADVANCES, 2012, 2 (08): : 3254 - 3256
  • [38] Formation of ferromagnetic interface between β-FeSi2 and Si(111) substrate
    Hattori, Azusa N.
    Hattori, Ken
    Kodama, Kenji
    Hosoito, Nobuyoshi
    Daimon, Hiroshi
    APPLIED PHYSICS LETTERS, 2007, 91 (20)
  • [39] Eutectic α-Fe2Si5 and Ε-FeSi grown by the Czochralski method from arc melt
    Takigawa, Yasuo
    Tode, Mayumi
    Ohmukai, Masato
    Kurosawa, Kou
    Noguchi, Satoru
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2002, 41 (6 A): : 3851 - 3853
  • [40] Fabrication of β-FeSi2 Films on Si(111) Using Solid-Phase Growth Reaction from Fe and FeSi Sources
    Momiyama, Katsuaki
    Kanomata, Kensaku
    Kubota, Shigeru
    Hirose, Fumihiko
    IEICE TRANSACTIONS ON ELECTRONICS, 2013, E96C (05): : 690 - 693
12345