CONDITIONS FOR DEPOSITION OF DIELECTRIC SIO2 AND SI3N4 FILMS IN A VERTICAL REACTOR

被引:0
|
作者
KUZNETSOV, YN
PROKOPEV, EP
KOROBOV, IV
KOLTSOVA, NG
PAVLOV, SP
机构
来源
关键词
D O I
暂无
中图分类号
O69 [应用化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:695 / 697
页数:3
相关论文
共 50 条
  • [1] FORMULATION OF A THEORETICAL-MODEL OF DEPOSITION OF DIELECTRIC SIO2 AND SI3N4 FILMS IN A VERTICAL REACTOR
    KUZNETSOV, YN
    PROKOPEV, EP
    KOROBOV, IV
    KOLTSOVA, NG
    PAVLOV, SP
    JOURNAL OF APPLIED CHEMISTRY OF THE USSR, 1976, 49 (03): : 573 - 577
  • [2] Properties of stacked dielectric films composed of SiO2/Si3N4/SiO2
    Dipartimento di Fisica, Unità INFM, Università dell' Aquila, Via Vetoio 10 Coppito, 67010 L'Aquila, Italy
    不详
    J Non Cryst Solids, (224-231):
  • [3] Properties of stacked dielectric films composed of SiO2/Si3N4/SiO2
    Santucci, S
    Lozzi, L
    Passacantando, M
    Phani, AR
    Palumbo, E
    Bracchitta, G
    De Tommasis, R
    Torsi, A
    Alfonsetti, R
    Moccia, G
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1999, 245 : 224 - 231
  • [4] Limitation current in Si3N4/SiO2 stacked dielectric films
    Tanaka, H
    APPLIED SURFACE SCIENCE, 1999, 147 (1-4) : 222 - 227
  • [5] THE DEGRADATION OF TDDB CHARACTERISTICS OF SIO2/SI3N4/SIO2 STACKED FILMS CAUSED BY SURFACE-ROUGHNESS OF SI3N4 FILMS
    TANAKA, H
    UCHIDA, H
    AJIOKA, T
    HIRASHITA, N
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (12) : 2231 - 2236
  • [6] LOW-TEMPERATURE DEPOSITION OF SiO2, Si3N4 OR SiO2-Si3N4.
    Anon
    IBM technical disclosure bulletin, 1986, 28 (09):
  • [7] FORMATION OF CONTACTS IN A PLANARIZED SIO2/SI3N4/SIO2 DIELECTRIC STRUCTURE
    RILEY, PE
    YOUNG, KK
    LIU, CC
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (09) : 2613 - 2617
  • [8] Study on optical interference effect of graphene oxide films on SiO2 and Si3N4 dielectric films
    Jung, Inhwa
    Son, Jong Yeog
    Park, Soo-Jin
    Rhee, Kyong-Yop
    RESEARCH ON CHEMICAL INTERMEDIATES, 2014, 40 (07) : 2477 - 2486
  • [9] Study on optical interference effect of graphene oxide films on SiO2 and Si3N4 dielectric films
    Inhwa Jung
    Jong Yeog Son
    Soo-Jin Park
    Kyong-Yop Rhee
    Research on Chemical Intermediates, 2014, 40 : 2477 - 2486
  • [10] Hole accumulation in SiO2/Si3N4/SiO2 capacitors prior to dielectric breakdown
    Sawachi, Masao, 1820, JJAP, Minato-ku, Japan (33):