IMPREGNATION WITH HEAVY-IONS IN SILICON SINGLE-CRYSTALS

被引:0
|
作者
KISELEVICH, M [1 ]
LYATUSHINSKI, A [1 ]
ZHUK, V [1 ]
OSIPENKO, BP [1 ]
机构
[1] MOSCOW JOINT NUCL RES INST,MOSCOW,USSR
来源
FIZIKA TVERDOGO TELA | 1975年 / 17卷 / 04期
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:1080 / 1084
页数:5
相关论文
共 50 条
  • [31] PRODUCTION OF SILICON SINGLE-CRYSTALS AND WAFERS
    ABE, Y
    DENKI KAGAKU, 1986, 54 (08): : 662 - 666
  • [32] CASTING LARGE SILICON SINGLE-CRYSTALS
    SCHMID, F
    JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (04) : 436 - 437
  • [33] EXTENDED DEFECTS IN SILICON SINGLE-CRYSTALS
    TIKHONOV, LV
    KHARKOVA, GV
    GOLUB, TV
    FIZIKA TVERDOGO TELA, 1986, 28 (04): : 1193 - 1194
  • [34] THE RESPONSE OF SILICON POSITION-SENSITIVE DETECTORS TO HEAVY-IONS
    READ, PM
    ROTBERG, VH
    TOLFREE, DWL
    GROVES, J
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 205 (1-2): : 331 - 333
  • [35] DAMAGE AND RECOVERY OF A SILICON CRYSTAL INDUCED BY SWIFT HEAVY-IONS
    BUGROV, VN
    KARAMYAN, SA
    IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA, 1990, 54 (05): : 883 - 890
  • [36] MICROTOMOGRAPHY BY HEAVY-IONS
    FISCHER, BE
    MUHLBAUER, C
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1990, 47 (03): : 271 - 282
  • [37] HEAVY-IONS AT CAEN
    HODGSON, PE
    NATURE, 1976, 264 (5581) : 18 - 18
  • [38] SPUTTERING OF SILICON AND GERMANIUM BY MIDDLE-ENERGY HEAVY-IONS
    SOMMERFELDT, H
    MASHKOVA, ES
    MOLCHANOV, VA
    PHYSICS LETTERS A, 1972, A 38 (04) : 237 - +
  • [39] RANGE PARAMETERS OF HEAVY-IONS AT 10 AND 35 KEV IN SILICON
    FEUERSTEIN, A
    KALBITZER, S
    OETZMANN, H
    PHYSICS LETTERS A, 1975, A 51 (03) : 165 - 166
  • [40] ENERGY-LOSS OF HEAVY-IONS IN NUCLEAR COLLISIONS IN SILICON
    GROB, JJ
    GROB, A
    PAPE, A
    SIFFERT, P
    PHYSICAL REVIEW B, 1975, 11 (09) : 3273 - 3279