SOLID-PHASE EPITAXIAL-GROWTH OF SI THROUGH PALLADIUM SILICIDE LAYERS

被引：36
|
作者：
CANALI, C [1 ]
CAMPISANO, SU [1 ]
LAU, SS [1 ]
LIAU, ZL [1 ]
MAYER, JW [1 ]
机构：
[1] CALTECH,PASADENA,CA 91125
来源：
JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 07期
关键词：
D O I：
10.1063/1.322026
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2831 / 2836
页数：6
相关论文
共 50 条
  • [41] DETERMINATION OF A TRANSFER CURVE OF GE/SI RATIO FROM GAS-PHASE TO SOLID-PHASE OBTAINED BY EPITAXIAL-GROWTH
    AHARONI, H
    ISRAEL JOURNAL OF TECHNOLOGY, 1976, 14 (4-5): : 165 - 171
  • [42] COMPARISON OF RESULTS AND MODELS OF SOLID-PHASE EPITAXIAL-GROWTH OF IMPLANTED SI LAYERS INDUCED BY ELECTRON-BEAM AND ION-BEAM IRRADIATION
    LULLI, G
    MERLI, PG
    PHYSICAL REVIEW B, 1993, 47 (21): : 14023 - 14031
  • [43] KINETICS OF INITIAL-STAGE OF SI TRANSPORT THROUGH PD-SILICIDE FOR EPITAXIAL-GROWTH
    LIAU, ZL
    CAMPISANO, SU
    CANALI, C
    LAU, SS
    MAYER, JW
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) : 1696 - 1699
  • [44] THE INFLUENCE OF STEPS ON THE EPITAXIAL-GROWTH OF IRON-SILICIDE ON SI(001)
    KENNOU, S
    CHERIEF, N
    CINTI, RC
    TAN, TAN
    SURFACE SCIENCE, 1989, 211 (1-3) : 685 - 691
  • [45] Epitaxial growth of uniform NiSi2 layers with atomically flat silicide/Si interface by solid-phase reaction in Ni-P/Si(100) systems
    Hsu, H. F.
    Chan, H. Y.
    Chen, T. H.
    Wu, H. Y.
    Cheng, S. L.
    Wu, F. B.
    APPLIED SURFACE SCIENCE, 2011, 257 (17) : 7422 - 7426
  • [46] ON THE MECHANISMS OF LATERAL SOLID-PHASE EPITAXIAL-GROWTH OF AMORPHOUS SI FILMS EVAPORATED ON SIO2 PATTERNS
    YAMAMOTO, H
    ISHIWARA, H
    FURUKAWA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (04): : 411 - 415
  • [47] ZONE-REFINING AND ENHANCEMENT OF SOLID-PHASE EPITAXIAL-GROWTH RATES IN AU-IMPLANTED AMORPHOUS SI
    JACOBSON, DC
    POATE, JM
    OLSON, GL
    APPLIED PHYSICS LETTERS, 1986, 48 (02) : 118 - 120
  • [48] FORMATION OF EPI-C49 TISI2/SI(111) BY SOLID-PHASE EPITAXIAL-GROWTH
    CHOI, CK
    YANG, SJ
    RYU, JY
    LEE, JY
    LEE, YP
    PARK, HH
    LEE, EW
    KIM, KH
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1993, 26 (02) : 148 - 152
  • [49] METAL-SEMICONDUCTOR INTERACTIONS-INTERFACES AND SOLID-PHASE EPITAXIAL-GROWTH
    MAYER, JW
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1975, 20 (03): : 280 - 281
  • [50] EPITAXIAL-GROWTH OF STRAIN-FREE GE FILMS ON SI SUBSTRATES BY SOLID-PHASE EPITAXY AT ULTRAHIGH PRESSURE
    ISHIWARA, H
    SATO, T
    SAWAOKA, A
    APPLIED PHYSICS LETTERS, 1992, 61 (16) : 1951 - 1953
12345