INCREASE IN NONRADIATIVE RECOMBINATION LIFETIMES IN SEMIINSULATING GAAS OBSERVED BY A PHOTOACOUSTIC TECHNIQUE

被引：1

作者：

SUEMUNE, I

UESUGI, N

KAN, Y

YAMANISHI, M

机构：

[1] Hiroshima Univ, Higashihiroshima, Jpn, Hiroshima Univ, Higashihiroshima, Jpn

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1987年 / 26卷 / 03期

关键词：

D O I：

10.1143/JJAP.26.L159

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L159 / L162

页数：4

共 50 条

[41] NONRADIATIVE RECOMBINATION AT DEEP LEVELS IN GAAS AND GAP BY LATTICE-RELAXATION MULTIPHONON EMISSION
LANG, DV
HENRY, CH
PHYSICAL REVIEW LETTERS, 1975, 35 (22) : 1525 - 1528
[42] EFFECT OF NONSTOICHIOMETRY ON NEAR-BAND-EDGE ABSORPTION AND NONRADIATIVE RECOMBINATION IN BULK GAAS
TUZEMEN, S
BROZEL, MR
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1992, 14 (01): : 47 - 52
[43] SOME NEW RESULTS ON NONRADIATIVE RECOMBINATION IN MBE GROWN GAAS-GAALAS HETEROSTRUCTURES
SERMAGE, B
MOLLOT, F
ALEXANDRE, F
GAO, Y
INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (106): : 423 - 428
[44] RECOMBINATION MECHANISM AND CARRIER LIFETIMES OF SEMI-INSULATING GAAS-CR
PAPASTAMATIOU, MJ
PAPAIOANNOU, GJ
JOURNAL OF APPLIED PHYSICS, 1990, 68 (03) : 1094 - 1098
[45] NEW TECHNIQUE TO DETECT THE GAAS SEMIINSULATING SURFACE-PROPERTY - CW ELECTROOPTIC PROBING
LO, YH
ZHU, ZH
PAN, CL
WANG, SY
WANG, S
APPLIED PHYSICS LETTERS, 1987, 50 (17) : 1125 - 1127
[46] Photoluminescence characterization of nonradiative recombination centers in MOVPE grown GaAs:N δ-doped superlattice structure
Haque, Md Dulal
Kamata, Norihiko
Islam, A. Z. M. Touhidul
Honda, Zentaro
Yagi, Shuhei
Yaguchi, Hiroyuki
OPTICAL MATERIALS, 2019, 89 : 521 - 527
[47] ELASTICALLY ENHANCED NONRADIATIVE RECOMBINATION IN ALGAAS-GAAS DOUBLE HETERO STRUCTURE LASER MATERIAL
JOHNSTON, WD
LOGAN, RA
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) : 1054 - 1055
[48] DEEP LEVEL SPECTROSCOPY, LOW-TEMPERATURE DEFECT MOTION AND NONRADIATIVE RECOMBINATION IN GAAS AND GAP
HENRY, CH
JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (05) : 1037 - 1052
[49] ELECTRON-PROBE INVESTIGATIONS OF NONRADIATIVE RECOMBINATION PROCESSES IN STRUCTURES MADE OF LIGHTLY DOPED GAAS
KONNIKOV, SG
KONSTANTINOV, AO
SOBOLEV, MM
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (06): : 654 - 656
[50] Annihilation of nonradiative recombination centers in GaAs/AlGaAs multiquantum well structures as a result of exposure to plasma
Zhuravlev, KS
Kolosanov, VA
Marahovka, II
Holland, M
SEMICONDUCTORS, 1997, 31 (12) : 1241 - 1243

← 1 2 3 4 5 →