COMPARISON OF MINORITY-CARRIER DIFFUSION LENGTH MEASUREMENTS IN SILICON BY THE PHOTOCONDUCTIVE DECAY AND SURFACE PHOTOVOLTAGE METHODS

被引：34
|
作者：
SARITAS, M [1 ]
MCKELL, HD [1 ]
机构：
[1] UNIV MANCHESTER,INST SCI & TECHNOL,DEPT ELECT ENGN & ELECTR,MANCHESTER M60 1QD,LANCS,ENGLAND
来源：
JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 09期
关键词：
D O I：
10.1063/1.340155
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：4561 / 4567
页数：7
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