2-DIMENSIONAL ELECTRON-GAS BASE HOT-ELECTRON TRANSISTOR

被引：8

作者：

MATTHEWS, P ^{[1
]}

KELLY, MJ ^{[1
]}

LAW, VJ ^{[1
]}

HASKO, DG ^{[1
]}

PEPPER, M ^{[1
]}

AHMED, H ^{[1
]}

PEACOCK, DC ^{[1
]}

FROST, JEF ^{[1
]}

RITCHIE, DA ^{[1
]}

JONES, GAC ^{[1
]}

机构：

[1] GEC LTD,HIRST RES CTR,WEMBLEY HA9 7PP,ENGLAND

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 13期

关键词：

Electron devices; materials; Semiconductor devices; Transistors;

D O I：

10.1049/el:19900565

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present data on a large area hot-electron transistor in the GaAs/AlGaAs materials system that uses a two-dimensional electron gas for its base. When the feature size is scaled from the present 100/im (approximately) to 1/mi, we predict useful transistor action at 100 GHz. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：862 / 864

页数：3

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