MICROPLASMA CHARACTERISTICS IN INP-IN0.53GA0.47AS LONG WAVELENGTH AVALANCHE PHOTODIODES

被引：4
|
作者：
MAGNEA, N [1 ]
PETROFF, PM [1 ]
CAPASSO, F [1 ]
LOGAN, RA [1 ]
FOY, PW [1 ]
机构：
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
来源：
APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 01期
关键词：
ELECTRIC FIELD EFFECTS - Analysis - SEMICONDUCTING INDIUM COMPOUNDS - Plasmas - SEMICONDUCTOR DIODES; PHOTODIODE;
D O I：
10.1063/1.95855
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Characterization of microplasmas has been performed on InP-In//0//. //5//3Ga//0//. //4//7As avalanche photodiodes using electron induced current and low-temperature cathodoluminescence measurements. Microplasmas are shown to be associated with a local increase of the electric field resulting from doping fluctuations which are tentatively associated with impurity segregation at crystal imperfections.
引用
收藏
页码：66 / 68
页数：3
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