THIN-FILM PROPERTIES OF SPUTTERED NIOBIUM SILICIDE ON SIO2 AND ON N+ POLY-SI

被引：0
|
作者：
CHOW, TP
LU, WJ
STECKL, AJ
机构：
[1] GE,CORP RES & DEV,SCHENECTADY,NY 12345
[2] RENSSELAER POLYTECH INST,CTR INTEGRATED ELECTR,TROY,NY 12181
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1983年 / 130卷 / 08期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：C324 / C324
页数：1
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