COMPENSATED-SURFACE OXIDE-PASSIVATED SILICON JUNCTION RADIATION DETECTORS

被引：5

作者：

HANSEN, WL

LOTHROP, RP

GOULDING, FS

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1963年 / 34卷 / 05期

关键词：

D O I：

10.1063/1.1729688

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1570 / &

共 50 条

[21] SILICON P-N JUNCTION RADIATION DETECTORS FOR TELSTAR SATELLITE
BUCK, TM
RODGERS, JW
WHEATLEY, GH
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1964, NS11 (03) : 294 - +
[22] RADIATION-DAMAGE OF SILICON JUNCTION DETECTORS BY NEUTRON-IRRADIATION
HASEGAWA, M
MORI, S
OHSUGI, T
KOJIMA, H
TAKETANI, A
KONDO, T
NOGUCHI, M
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1989, 277 (2-3): : 395 - 400
[23] SHALLOW P+N JUNCTION SILICON NUCLEAR RADIATION DETECTORS
DOBROVODSKY, J
BESSE, I
HRUBCIN, L
KOVAC, P
SENSORS AND ACTUATORS A-PHYSICAL, 1994, 42 (1-3) : 558 - 561
[24] GLOW-DISCHARGE-IMPLANTED, THERMALLY ANNEALED, OXIDE-PASSIVATED SILICON SOLAR-CELLS OF 19-PERCENT EFFICIENCY
WESTBROOK, RD
WOOD, RF
JELLISON, GE
APPLIED PHYSICS LETTERS, 1987, 50 (08) : 469 - 471
[25] STABLE, HIGH FIELD SILICON P-N JUNCTION RADIATION DETECTORS
HUTH, GC
BERGESON, HE
TRICE, JB
REVIEW OF SCIENTIFIC INSTRUMENTS, 1963, 34 (11): : 1283 - &
[26] NUCLEAR PULSE ENHANCEMENT IN SILICON P-N JUNCTION RADIATION DETECTORS
GRAINGER, RJ
BAILY, NA
REVIEW OF SCIENTIFIC INSTRUMENTS, 1964, 35 (02): : 232 - &
[27] A SCATTERING CHAMBER FOR USE WITH COOLED LARGE AREA LITHIUM-COMPENSATED SILICON RADIATION DETECTORS
DODGE, WR
COLEMAN, JA
DOMEN, SR
NUCLEAR INSTRUMENTS & METHODS, 1966, 42 (02): : 181 - +
[28] FIELD OXIDE RADIATION-DAMAGE MEASUREMENTS IN SILICON STRIP DETECTORS
LAAKSO, M
SINGH, P
SHEPARD, PF
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1993, 327 (2-3): : 517 - 522
[29] TRANSIENT PROCESSES IN DC CIRCUIT OF P-N-JUNCTION SILICON RADIATION DETECTORS
KLEVENHAGEN, SC
PHYSICS IN MEDICINE AND BIOLOGY, 1977, 22 (04): : 773 - 779
[30] ELECTRIC FIELD STRENGTH DEPENDENCE OF SURFACE DAMAGE IN OXIDE PASSIVATED SILICON PLANAR TRANSISTORS
GOBEN, CA
IRANI, CH
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1970, NS17 (06) : 18 - +

← 1 2 3 4 5 →