THE EFFECTS OF ELECTRON-BOMBARDMENT ON VACUUM-DEPOSITED AMORPHOUS-GERMANIUM FILMS

被引：1
|
作者：
JOHNSON, GW
BRODIE, DE
机构：
来源：
CANADIAN JOURNAL OF PHYSICS | 1991年 / 69卷 / 05期
关键词：
D O I：
10.1139/p91-105
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Low-energy electron irradiation was used to inhibit crystallite nucleation in a range of substrate temperatures (473-513 K) where crystallite formation would normally be observed. The properties of the amorphous phase obtained closely match the published results for high-temperature annealed (up to 723 K) amorphous germanium films in the precrystallization regime rather than those for amorphous germanium films obtained by annealing them to 513 K. It is shown that the properties of annealed amorphous germanium films are independent of a range of deposition conditions when pure (water free) films are deposited.
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页码：621 / 626
页数：6
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