A MULTI-MRAD HARDENED 8 BIT/20 MHZ FLASH ADC

被引：5
|
作者：
BAILLE, F
BOREL, G
COMMERE, B
ROY, F
DELMAS, C
TERRIER, C
机构：
[1] Thomson Composants Militaires et Spatiaux, Saint-Egrève, BP 123, 38521
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1992年 / 39卷 / 03期
关键词：
D O I：
10.1109/23.277526
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An 8 bit 20 MHz flash ADC using a radiation hardened SOI process is presented. The circuit is capable of operating at up to 20 MHz, even after a total dose exposure of 100 MRad (SiO2) (10 Kev X-ray).
引用
收藏
页码：401 / 404
页数：4
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