SCALING BEHAVIOR AT ZERO-TEMPERATURE CRITICAL-POINTS

被引：10

作者：

BAKER, GA ^{[1
]}

BONNER, JC ^{[1
]}

机构：

[1] BROOKHAVEN NATL LAB, APPL MATH DEPT, UPTON, NY 11973 USA

来源：

PHYSICAL REVIEW B | 1975年 / 12卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.12.3741

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3741 / 3744

页数：4

共 50 条

[41] ON THE NUMBER OF CRITICAL-POINTS OF THE PERIOD
CHOW, SN
SANDERS, JA
JOURNAL OF DIFFERENTIAL EQUATIONS, 1986, 64 (01) : 51 - 66
[42] TRAJECTORIES JOINING CRITICAL-POINTS
ARTSTEIN, Z
SLEMROD, M
JOURNAL OF DIFFERENTIAL EQUATIONS, 1982, 44 (01) : 40 - 62
[43] GENERALIZED SCALING HYPOTHESIS IN MULTICOMPONENT SYSTEMS .2. SCALING HYPOTHESIS AT CRITICAL-POINTS OF ARBITRARY ORDER
HANKEY, A
CHANG, TS
STANLEY, HE
PHYSICAL REVIEW B, 1973, 8 (03): : 1178 - 1184
[44] GENERALIZED VAPOR-PRESSURE BEHAVIOR OF SUBSTANCES BETWEEN THEIR TRIPLE POINTS AND CRITICAL-POINTS
GOMEZNIETO, M
THODOS, G
AICHE JOURNAL, 1977, 23 (06) : 904 - 913
[45] CRITICAL-BEHAVIOR OF THE ZERO-TEMPERATURE CONDUCTIVITY IN COMPENSATED SILICON, SI-(P,B) - REPLY
HIRSCH, MJ
THOMANSCHEFSKY, U
HOLCOMB, DF
PHYSICAL REVIEW B, 1989, 40 (06): : 4196 - 4197
[46] CRITICAL-BEHAVIOR OF THE ZERO-TEMPERATURE CONDUCTIVITY IN COMPENSATED SILICON, SI-(P,B) - COMMENT
MOBIUS, A
PHYSICAL REVIEW B, 1989, 40 (06): : 4194 - 4195
[47] ZERO-TEMPERATURE CRITICAL-BEHAVIOR OF THE INFINITE-RANGE QUANTUM ISING SPIN-GLASS
MILLER, J
HUSE, DA
PHYSICAL REVIEW LETTERS, 1993, 70 (20) : 3147 - 3150
[48] TEMPERATURE-DEPENDENCE OF THE DIELECTRIC FUNCTION AND INTERBAND CRITICAL-POINTS IN SILICON
LAUTENSCHLAGER, P
GARRIGA, M
VINA, L
CARDONA, M
PHYSICAL REVIEW B, 1987, 36 (09): : 4821 - 4830
[49] Spin critical opalescence in zero-temperature Bose-Einstein condensates
Santamore, D. H.
Timmermans, E.
EPL, 2012, 97 (03)
[50] COEXISTENCE CURVES AT LIQUID-LIQUID CRITICAL-POINTS - ISING EXPONENTS AND EXTENDED SCALING
GREER, SC
PHYSICAL REVIEW A, 1976, 14 (05): : 1770 - 1780

← 1 2 3 4 5 →