RADIATION CHARACTERISTICS OF EPITAXIAL CAF2 ON SILICON

被引：4
|
作者：
NISHIOKA, Y
CHO, CC
SUMMERFELT, SR
GNADE, BE
BROWN, GA
机构：
[1] TEXAS INSTRUMENTS INC,CENT RES LAB,DALLAS,TX 75265
[2] TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,SEMICOND PROC LAB,DALLAS,TX 75265
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1991年 / 38卷 / 06期
关键词：
D O I：
10.1109/23.124103
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The radiation characteristics of a Al/CaF2/Si capacitor have been investigated. The single crystal CaF2 film has been grown on Si(111) at a temperature as low as 300-degrees-C by molecular beam epitaxy (MBE). Previous studies showed that CaF2 films grown on Si(111) above 500-degrees-C exhibited flat C-V curves, suggesting a pinned CaF2/Si(111) interface. However, we have been able to obtain unpinned C-V curves from as-deposited CaF2 films grown at 300-degrees-C. The generation of positive charges and interface traps after X-ray irradiation is smaller in the CaF2 capacitor than in a similar SiO2 capacitor, and it is comparable to a radiation hardened SiO2 capacitor.
引用
收藏
页码：1265 / 1270
页数：6
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