EPITAXIAL BILAYER GROWTH OF CAF2(111)/PD(111) ON CAF2(111) SUBSTRATES

被引：1

作者：

JO, BH

VOOK, RW

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1993年 / 11卷 / 04期

关键词：

D O I：

10.1116/1.578438

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Epitaxial Pd(111) films were grown in UHV on air-cleaved CaF2(111) substrates. Subsequently, epitaxial CaF2 (111) films were grown on top of the Pd layer. All films were grown by vacuum evaporation techniques. The growth conditions, structure, and surface morphology of the evaporated epitaxial bilayers of Pd and CaF2 were studied with reflection high energy electron diffraction, x-ray diffraction, and scanning electron microscopy. This epitaxial dielectric film/metal film/insulator substrate structure has possible important applications for monolithic microwave integrated circuit devices.

引用

页码：1044 / 1047

页数：4

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