PARTICULATES IN SILICON MOLECULAR-BEAM EPITAXY

被引：2

|

作者：

BELLAVANCE, D

LIU, J

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 03期

关键词：

D O I：

10.1116/1.583783

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：751 / 751

页数：1

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