SUBSTITUTIONAL AND DEFECT DOPING EFFECTS ON THE PHOTOELECTROCHEMICAL PROPERTIES OF FE2O3

被引：6
|
作者：
HOULIHAN, JF [1 ]
PANNAPARAYIL, T [1 ]
BURDETTE, HL [1 ]
MADACSI, DP [1 ]
POLLOCK, RJ [1 ]
机构：
[1] UNIV CONNECTICUT,GROTON,CT
来源：
MATERIALS RESEARCH BULLETIN | 1985年 / 20卷 / 02期
关键词：
D O I：
10.1016/0025-5408(85)90042-X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：163 / 177
页数：15
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