SI-DOPING EFFECT ON ELECTRICAL-PROPERTIES OF LEC-GAAS CRYSTALS

被引：6
|
作者：
FORNARI, R
ZANOTTI, L
ZUCCALLI, G
机构：
来源：
MATERIALS CHEMISTRY AND PHYSICS | 1983年 / 9卷 / 1-3期
关键词：
D O I：
10.1016/0254-0584(82)90029-3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：307 / 314
页数：8
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