INFLUENCE OF THE ADSORPTION OF HYDROGEN ON THE CAPACITANCE-VOLTAGE CHARACTERISTICS OF PD-GAAS DIODES

被引：0
|
作者：
KULIEV, BB
SAFAROV, DM
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1983年 / 17卷 / 06期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：698 / 699
页数：2
相关论文
共 50 条
  • [31] INFLUENCE OF FIXED CHARGE IN THE DIELECTRIC ON THE CAPACITANCE-VOLTAGE CHARACTERISTICS OF MSDS STRUCTURES
    SYSOEV, BI
    BEZRYADIN, NN
    SYNOROV, VF
    SOVIET MICROELECTRONICS, 1980, 9 (02): : 68 - 72
  • [32] A study of current-voltage and capacitance-voltage characteristics of Au/n-GaAs and Au/GaN/n-GaAs Schottky diodes in wide temperature range
    Helal, Hicham
    Benamara, Zineb
    Ben Arbia, Marwa
    Khettou, Abderrahim
    Rabehi, Abdelaziz
    Kacha, Arslane Hatem
    Amrani, Mohammed
    INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS, 2020, 33 (04)
  • [33] Influence of quantum-well structural parameters on capacitance-voltage characteristics
    Moon, CR
    Lim, H
    APPLIED PHYSICS LETTERS, 1999, 74 (20) : 2987 - 2989
  • [34] Characterization of Pd-GaAs Schottky diodes prepared by the electroless plating technique
    Chen, HI
    Hsiung, CK
    Chou, YI
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2003, 18 (07) : 620 - 626
  • [35] Influence of AlGaN/GaN heterojunction parameters on its capacitance-voltage characteristics
    Osvald, J.
    JOURNAL OF APPLIED PHYSICS, 2009, 106 (01)
  • [36] THE INFLUENCE OF ANNEALING ON THE CAPACITANCE-VOLTAGE CHARACTERISTICS OF METAL SIPOS SILICON CAPACITORS
    BURTE, EP
    SOLID-STATE ELECTRONICS, 1988, 31 (12) : 1663 - 1666
  • [37] Influence of deep levels on capacitance-voltage characteristics of AlGaN/GaN heterostructures
    Osvald, J.
    JOURNAL OF APPLIED PHYSICS, 2011, 110 (07)
  • [38] Capacitance-Voltage Characterization of GaAs-Oxide Interfaces
    Brammertz, G.
    Lin, H. C.
    Martens, K.
    Mercier, D.
    Merckling, C.
    Penaud, J.
    Adelmann, C.
    Sioncke, S.
    Wang, W. E.
    Caymax, M.
    Meuris, M.
    Heyns, M.
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2008, 155 (12) : H945 - H950
  • [39] PHOTOSENSITIVE CAPACITANCE-VOLTAGE CHARACTERISTICS OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS/AIGAAS/GAAS HETEROSTRUCTURES
    QIAN, QD
    MELLOCH, MR
    COOPER, JA
    APPLIED PHYSICS LETTERS, 1986, 48 (10) : 638 - 640
  • [40] The effects of electron irradiation on the current-voltage and capacitance-voltage measurements of Sn/p-GaAs/Au diodes
    Duman, Songuel
    Kaya, Fikriye Seyma
    Dogan, Huelya
    Turgut, Gueven
    Sahin, Yilmaz
    RADIATION PHYSICS AND CHEMISTRY, 2022, 193
12345