共 50 条
- [1] INFLUENCE OF THE ADSORPTION OF HYDROGEN ON THE CAPACITANCE-VOLTAGE CHARACTERISTICS OF Pd-GaAs DIODES.Soviet physics. Semiconductors, 1983, 17 (06): : 698 - 699Kuliev, B.B.Safarov, D.M.
- [2] PD-SI SCHOTTKY DIODES AS HYDROGEN SENSING DEVICES - CAPACITANCE-VOLTAGE CHARACTERISTICSSOLID STATE COMMUNICATIONS, 1983, 45 (04) : 347 - 350DILIGENTI, ASTAGI, MCIUTI, V
- [3] CAPACITANCE-VOLTAGE CHARACTERISTICS OF MICROWAVE SCHOTTKY DIODESIEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1991, 39 (05) : 857 - 863GELMONT, BSHUR, MMATTAUCH, RJ
- [4] CAPACITANCE-VOLTAGE CHARACTERISTICS OF ZNO MIS DIODESJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (08): : 1517 - 1518KANAI, Y
- [6] Capacitance-voltage characteristics of hydrogen sensitive Pt-Si Schottky diodesTECHNICAL DIGEST OF THE SEVENTH INTERNATIONAL MEETING ON CHEMICAL SENSORS, 1998, : 666 - 668Vinh, DXKhoi, PH
- [7] COMPARISON AND ANALYSIS OF PD-GAAS AND PT-GAAS SCHOTTKY DIODES FOR HYDROGEN DETECTIONJOURNAL OF APPLIED PHYSICS, 1994, 75 (12) : 8175 - 8181KANG, WPGURBUZ, Y
- [8] INFLUENCE OF DEFECTS IN SEMICONDUCTORS ON CHARACTERISTICS OF JUNCTIONS PD-GAASIZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1988, 31 (07): : 90 - 95PARKHOMENKO, RPGLUSHCHENKO, VAYAKUBENYA, MPGRIGORYEV, YAPOTREPALOV, AA
- [10] CAPACITANCE-VOLTAGE CHARACTERISTICS OF GAAS-ALAS HETEROSTRUCTURESAPPLIED PHYSICS LETTERS, 1985, 47 (06) : 631 - 633WOODWARD, TKSCHLESINGER, TEMCGILL, TCBURNHAM, RD